SIS612EDNT www.vishay.com vishay siliconix s13-1675-rev. a, 29-jul-13 1 document number: 62874 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 20 v (d-s) mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? low thermal resistance powerpak package with small size and 0.75 mm profile ? typical esd performance 3400 v ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? battery switch / load switch ? power management for tablet pcs and mobile computing notes a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. see solder profile ( www.vishay.com/doc?73257 ). the powerpak 1212-8 is a lead less package. the end of th e lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. d. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. e. maximum under steady stat e conditions is 81 c/w. f. based on t c = 25 c. g. package limited. product summary v ds (v) r ds(on) ( ? ) max. i d (a) f, g q g (typ.) 20 0.0039 at v gs = 4.5 v 50 22.5 nc 0.0042 at v gs = 3.7 v 50 0.0058 at v gs = 2.5 v 50 ordering information: SIS612EDNT-t1-ge3 (lead (pb)-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm thin powerpak ? 1212-8 bottom view 0.75 mm n-channel mosfet s d g absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d 50 g a t c = 70 c 50 g t a = 25 c 24.6 a, b t a = 70 c 19.7 a, b pulsed drain current (t = 100 s) i dm 200 continuous source-drain diode current t c = 25 c i s 43.3 t a = 25 c 3.1 a, b single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 52 w t c = 70 c 33 t a = 25 c 3.7 a, b t a = 70 c 2.4 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol ty pical maximum unit maximum junction-to-ambient a, e t ? 10 s r thja 24 33 c/w maximum junction-to-case (drain) steady state r thjc 1.9 2.4
SIS612EDNT www.vishay.com vishay siliconix s13-1675-rev. a, 29-jul-13 2 document number: 62874 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subj ect to production testing. ? ? ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient ? v ds /t j i d = 250 a 18 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 3.5 gate-source threshold voltage v gs(th ) v ds = v gs , i d = 1 ma 0.5 1.2 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 10 a v ds = 0 v, v gs = 4.5 v 1 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ? 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 14 a 0.0032 0.0039 ? v gs = 3.7 v, i d = 14 a 0.0035 0.0042 v gs = 2.5 v, i d = 13 a 0.0041 0.0058 forward transconductance a g fs v ds = 10 v, i d = 14 a 50 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 2060 pf output capacitance c oss 558 reverse transfer capacitance c rss 365 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 20 a 46 70 nc v ds = 10 v, v gs = 4.5 v, i d = 20 a 22.5 34 gate-source charge q gs 4.1 gate-drain charge q gd 5.3 gate resistance r g f = 1 mhz 0.2 1 2 ? turn-on delay time t d(on) v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? 16 24 ns rise time t r 65 98 turn-off delaytime t d(off) 40 60 fall time t f 12 20 turn-on delay time t d(on) v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 10 v, r g = 1 ? 918 rise time t r 510 turn-off delaytime t d(off) 34 51 fall time t f 48 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 50 a pulse diode forward current (t = 100 s) i sm 200 body diode voltage v sd i s = 10 a, v gs = 0 v 0.75 1.2 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 22 44 ns body diode reverse recovery charge q rr 10 20 nc reverse recovery fall time t a 11 ns reverse recovery rise time t b 11
SIS612EDNT www.vishay.com vishay siliconix s13-1675-rev. a, 29-jul-13 3 document number: 62874 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) gate current vs. gate-to-source voltage output characteristics on-resistance vs. drain current and gate voltage gate current vs. gate -to-source voltage transfer characteristics capacitance 0.000 0.010 0.020 0.030 0.040 0.050 0 6 12 18 24 30 i gss - g ate current (ma) v gs - g ate- s ource voltage (v) t j = 25 c 0 10 20 30 40 50 0 0.5 1 1.5 2 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs gs s (on) - on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 2.5 v v gs = 3.7 v 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 0 5 10 15 20 i gss - g ate current (a) v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 0 0.5 1 1.5 2 0 0.3 0.6 0.9 1.2 1.5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 600 1200 1800 2400 3000 0 5 10 15 20 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss c o ss c r ss
SIS612EDNT www.vishay.com vishay siliconix s13-1675-rev. a, 29-jul-13 4 document number: 62874 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) gate charge source-drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0 2 4 6 8 10 0 10 20 30 40 50 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 16 v v d s = 10 v v d s = 5 v i d = 20 a 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 0.2 0.4 0.6 0.8 1 - 50 - 25 0 25 50 75 100 125 150 v gs (th) (v) t j - temperature ( c) i d = 250 a 0.7 1 1.3 1.6 1.9 - 50 - 25 0 25 50 75 100 125 150 r d s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) i d = 14 a v gs = 4.5 v, 3.7 v, 2.5 v 0.000 0.003 0.006 0.009 0.012 0 2 4 6 8 10 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d = 20 a 0.01 0 1 40 50 10 600 time (s) 30 20 po w er (w) 0.1 10 100
SIS612EDNT www.vishay.com vishay siliconix s13-1675-rev. a, 29-jul-13 5 document number: 62874 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) safe operating area power, junction-to-case current derating* ? ? ? ? ? ? ? * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s limited by r d s (on) * 1 m s t a = 25 c bvd ss limited 10 m s 100 s 10s, 1 s dc 0 16 32 48 64 0 25 50 75 100 125 150 power (w) t c - ca s e temperature ( c) 0 18 36 54 72 90 0 25 50 75 100 125 150 i d - drain current (a) t c - ca s e temperature ( c) package limited
SIS612EDNT www.vishay.com vishay siliconix s13-1675-rev. a, 29-jul-13 6 document number: 62874 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) n ormalized thermal transient impedance, junction-to-am b ient n ormalized thermal transient impedance, junction-to-case ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62874 . 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) n ormalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 8 1 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. surface mounted p dm 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) n ormalized ef fective transient thermal impedance
package information www.vishay.com vishay siliconix revison: 18-feb-13 1 document number: 62836 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? 1212-8t millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.031 a1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 d 3.20 3.30 3.40 0.126 0.130 0.134 d1 2.95 3.05 3.15 0.116 0.120 0.124 d2 1.98 2.11 2.24 0.078 0.083 0.088 d3 0.48 - 0.89 0.019 - 0.035 d4 0.47 typ. 0.0185 typ. d5 2.3 typ. 0.090 typ. e 3.20 3.30 3.40 0.126 0.130 0.134 e1 2.95 3.05 3.15 0.116 0.120 0.124 e2 1.47 1.60 1.73 0.058 0.063 0.068 e3 1.75 1.85 1.98 0.069 0.073 0.078 e4 0.34 typ. 0.013 typ. e 0.65 bsc 0.026 bsc k 0.86 typ. 0.034 typ. k1 0.35 - - 0.014 - - h 0.30 0.41 0.51 0.012 0.016 0.020 l 0.30 0.43 0.56 0.012 0.017 0.022 l1 0.06 0.13 0.20 0.002 0.005 0.008 ? 0 - 12 0 - 12 w 0.15 0.25 0.36 0.006 0.010 0.014 m 0.125 typ. 0.005 typ. ecn: t13-0056-rev. a, 18-feb-13 dwg: 6012
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